Growth and properties of new artificial doping superlattices in GaAs-Reference-Cited by-同舟云学术

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Growth and properties of new artificial doping superlattices in GaAs

Published:1982-05 Issue:3 Volume:13 Page:5-22
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Ploog K.,Künzel H.

Publisher

Elsevier BV

Subject

General Engineering

Reference61 articles.

1. Molecular Beam Epitaxy;Cho;Progr. Solid-State Chem.,1975

2. Semiconductor Superfine Structures by Computer-Contolled Molecular Beam Epitaxy;Esaki;Thin-Solid Films,1976

3. Molecular Beam Epitaxy of III–V Compounds;Ploog,1980

4. Fundamental Aspects of Molecular Beam Epitaxy;Foxon,1981

5. Molecular Beam Epitaxy of III–V Compounds: Technology and Growth Process;Ploog;Ann. Rev. Mater. Sci.,1981

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1. Light-driven motion of charged domain walls in isolated ferroelectrics;Physical Review B;2022-12-26

2. Enhancement of carrier lifetime in silicon‐doping superlattices;Applied Physics Letters;1988-03-14

3. Persistent photoconductivity and field-enhanced conductivity in amorphous-silicon doping-modulated superlattices;Physical Review B;1987-02-15

4. Doping superlattices ("n-i-p-i crystals");IEEE Journal of Quantum Electronics;1986-09

5. Periodic doping and heterostructure multilayers of GaxIn1−xAsyP1−y: LPE growth and characterization;Journal of Crystal Growth;1985-12

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