Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates-Reference-Cited by-同舟云学术

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

Published:2000-01 Issue:1 Volume:31 Page:1-7
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Ustinov V.M.,Zhukov A.E.,Kovsh A.R.,Maleev N.A.,Mikhrin S.S.,Tsatsul'nikov A.F.,Maximov M.V.,Volovik B.V.,Bedarev D.A.,Kop'ev P.S.,Alferov Z.I.,Vorob'ev L.E.,Firsov D.A.,Suvorova A.A.,Soshnikov I.P.,Werner P.,Ledentsov N.N.,Bimberg D.

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

1. Low-threshold injection lasers based on vertically coupled quantum dots;Ustinov;J. Cryst. Growth,1997

2. Injection lasers based on InGaAs quantum dots in an AlGaAs matrix;Zhukov;J. Electron. Mat.,1998

3. 1.3 μm room-temperature GaAs-based quantum-dot laser;Huffaker;Appl. Phys. Lett.,1998

4. InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0=385 K) grown by metal organic chemical vapor deposition;Maximov;Inst. Phys. Conf. Ser. No.,1997

5. Injection heterolaser based on quantum dots with 3.3 W output power;Kovsh;Phys. Tech. Lett.,1999

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