High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference5 articles.
1. High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications
2. Z. Meng, T. Ma, M. Wong, Technical Digest of the IEEE International Electron Devices Meeting. December/3–5/2001, Washington DC, USA, pp. 755–758.
3. Application of re-crystallized metal-induced unilaterally crystallized polycrystalline-silicon thin-film-transistor technology to reflective liquid-crystaldisplay
4. Digest of Technical Papers;Meng,2000
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