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Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons

  • Published:2004-03 Issue:3 Volume:35 Page:249-257
  • ISSN:0026-2692
  • Container-title:Microelectronics Journal
  • language:en
  • Short-container-title:Microelectronics Journal

Author:

Hazdra P.,Vobecký J.,Dorschner H.,Brand K.

Publisher

Elsevier BV

Subject

General Engineering

Reference21 articles.

1. Axial recombination centre technology for freewheeling diodes;Lutz;Proc. EPE'97,1997

2. A new degree of freedom in diode optimization: arbitrary axial lifetime profiles by means of ion irradiation;Hazdra;Proc. ISPSD'2000,2000

3. The MeV-implantation facility at Bochum;Brand;Proc. IIT'94,1994

4. The irradiation laboratory at ČKD semiconductors Praha;Kliský;Nucl. Instrum. Meth. B,1990

5. Radiation field distributions of an industrial electron beam accelerator;Dorschner;Nucl. Instrum. Meth. B,2000

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