1. Theoretical considerations on lateral spread of implanted ions;Furukawa;Japan Journal of Applied Physics,1972
2. Baumann H., Bethge, K., Fuss, K., Krimmel, E. F., Langfeld, R., Lutsch, A. G. K., Runge, H. and Witskowski, S., “Laser and Electron beam Annealing of Buried Layers produced by MeV Ion Implantation”, Proceedings of the Symposium on Laser and Electron Beam Processing of Electronic Materials, Electrochemical Soc., Princeton, N. J. 08540, pp. 152–160.
3. Contribution to range statistics of boron implanted into silicon at higher energies;Lutsch;Microelectronics Journal,1981
4. Ion Implantation of Boron in Silicon;Hofker,1975