Electrical characterisation of ion-implanted silicon-on-sapphire
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference12 articles.
1. Models for computer Simulation of Complete IC Fabrication Process;Antoniadis;IEEE Transactions on Electron Devices,1979
2. Raman Measurement of Stress in Silicon-on Sapphire Device Structure;Brueck;Appl. Phys. Lett.,1982
3. Correlation of Ion Channeling and Electron Microscopy Results in the Evaluation of Heteroepitaxial Silicon;Picraux;J. Appl. Phys.,1973
4. Variations in Electrical Properties of Silicon Films on Sapphire Using the MOS Hall Technique;Ipri;Appl. Phys. Lett.,1972
5. Mobility of Current Carriers in Silicon-on-Sapphire (SOS) Films;Hsu;RCA Review,1975
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1. Transistor-Based Characterization Techniques;Electrical Characterization of Silicon-on-Insulator Materials and Devices;1995
2. Silicon films on sapphire;Reports on Progress in Physics;1987-03-01
3. Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon‐on‐insulator films formed by oxygen implantation;Journal of Applied Physics;1986-11
4. Channel doping profile of silicon‐on‐sapphire transistors;Journal of Applied Physics;1985-03-15
5. Influence of Growth Temperature on the Physical Properties of Si Films on Yttria‐Stabilized, Cubic Zirconia Substrates;Journal of The Electrochemical Society;1985-01-01
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