High Performance InGaAs/GaAs Strained Layer Superlattice Photodetectors Compatible with GaAs MESFET Technology-Reference-Cited by-同舟云学术

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High Performance InGaAs/GaAs Strained Layer Superlattice Photodetectors Compatible with GaAs MESFET Technology

Published:1998 Issue:1 Volume:10 Page:105-112
ISSN:1018-3639
Container-title:Journal of King Saud University - Engineering Sciences
language:en
Short-container-title:Journal of King Saud University - Engineering Sciences

Author:

Debbar Nacer

Publisher

Elsevier BV

Subject

General Engineering

Reference14 articles.

1. Design and Performance Analysis of InP Based High Speed and High Sensitivity Optoelectronic Integrated Receivers;John;IEEE Trans. Electron. Dev,1994

2. High Performance Monolithically Integrated InGaAs/InP p-i-n/JFET Optical Receiver Front-end with Adaptive Feedback Control;Blaser;IEEE Photon. Tech. Letters,1992

3. Monolithically Integrated MSM-Transimpedance Amplifier Grown by MBE for 1.0-1.6 μm Operation;Fuji;IEEE J. Quantum Electron,1991

4. High Performance AlInAs/GalnAs MSM-HEMT Receiver OEIC Grown by MOCVD on Patterned InP Substrates;Hong;Electron. Lett,1989

5. A Superlattice GaAs/InGaAs-on-GaAs Photodetector for 1.3 jam Applications;Zirnigibl;IEEE Electron. Dev. Lett,1989

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