On the use of a microwave linear accelerator for control of carrier lifetime in electronic silicon devices
Author:
Publisher
Elsevier BV
Subject
Radiation
Reference13 articles.
1. Control of diffused diode recovery time through gold doping
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3. Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers
4. Lifetime control in silicon power devices by electron or gamma irradiation
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2. Irradiation of power semiconductor devices by high energy electrons: The Italian experience;Radiation Physics and Chemistry;1994-10
3. Performance and applications of the 14 MEV electron radiation linac at CIAE;Radiation Physics and Chemistry;1993-07
4. Electron irradiation effects on power MOS transistors;International Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry;1990-01
5. Recombination centers and electrical characteristics in silicon power P-I-N diodes irradiated with high energy electrons;International Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry;1988-01
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