1. Helsper M, Fuchs FW, Munzer M. Analysis and comparison of planar and trench IGBT modules under ZVS and ZCS switching conditions. In: Power electronics specialists conference, 2002, vol. 2. p. 614–9.
2. Rajapakse AD, Gole AM, Wilson PL. Approximate loss formulae for estimation of IGBT switching losses through EMTP-type simulations. In: International conference on power systems transients (IPST’05), Montreal, Canada, 2005, Paper No. IPST05 – 184.
3. Fiel A, Wu T. MOSFET failure modes in the ZVS full bridge switched mode power supply. In: Applied power electronics conference and exposition, 2001, vol. 2. p. 1247–52.
4. Wang HSZ Ch, Millner F. Investigation of 1.2kV SiC MOSFET for high frequency high power applications. In: Applied power electronics conference and exposition, Palm Springs CA, USA, 2010, vol. 1. p. 1572–7.
5. Choi WS, Young SM, Kim DW. Analysis of MOSFET failure modes in LLC resonant converter. In: Telecommunications energy conference, Bucheon, South Korea, 2009, vol.1. p. 1–6.