A high-voltage floating level shifter for a multi-stage charge-pump in a standard 1.8 V/3.3 V CMOS process

Author:

Palomeque-Mangut DavidORCID,Rodríguez-Vázquez Ángel,Delgado-Restituto Manuel

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference19 articles.

1. An efficient high speed and low power voltage-level shifter;Rezaei;AEU - Int J Electr Commun,2021

2. An ultra-low leakage and small-area level shifter based on super-cut-off mechanism;Wang;AEU - Int J Electr Commun,2022

3. A fully integrated floating gate driver with adaptive gate drive technique for high-voltage applications;Zhou,2018

4. A 1.2 V–20 V Closed-Loop Charge Pump for high dynamic range photodetector array biasing;Shen;IEEE Trans Circuits Syst II,2019

5. An 82.9%-efficiency triple-output battery management unit for implantable neuron stimulator in 180-nm standard CMOS;Liu;IEEE Trans Circuits Syst II Express Briefs,2019

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