Automatic large-signal GaAs HEMT modeling for power amplifier design-Reference-Cited by-同舟云学术

Automatic large-signal GaAs HEMT modeling for power amplifier design

Published:2019-02 Issue: Volume:100 Page:138-143
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Popov Artyom^ORCID,Bilevich Dmitry^ORCID,Salnikov Andrei^ORCID,Dobush Igor^ORCID,Goryainov Aleksandr,Kalentyev Alexey

Funder

Russian Foundation for Basic Research

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference23 articles.

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3. Chang C, Giacomo-Brunel V Di, Floriot D, Grünenpütt J, Hosch M, Blanck H. Nonlinear transistor modeling for industrial 0.25μm AlGaN-GaN HEMTs. In: 2013 Eur. Microw. Integr. Circuit Conf.; 2013. p. 500–3.

4. A new empirical nonlinear model for HEMT and MESFET devices;Angelov;IEEE Trans Microw Theory Tech,1992

5. A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers;Curtice;IEEE Trans Microw Theory Tech,1985

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