A fully-integrated all-MOS 1.2 V low-dropout regulator for ultra-low power applications

Author:

Ren XinxinORCID,Qiao Shushan,Wang Yulian,Wang Yadong,Hu Xiaoyu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference22 articles.

1. A 975-mW fully integrated genetic variant discovery system-on-chip in 28 nm for next-generation sequencing;Wu;IEEE J Solid-State Circuits,2021

2. 3.3 Kunlun: A 14nm high-performance AI processor for diversified workloads;Ouyang,2021

3. A transient-enhanced output-capacitorless LDO with fast local loop and overshoot detection;Liu;IEEE Trans Circuits Syst I Regul Pap,2020

4. A fast-transient low-dropout regulator (LDO) with super class-AB OTA;Yu;AEU Int J Electron Commun,2022

5. A transient-enhanced low-dropout regulator with dynamic current boost technique voltage buffer;Yu;AEU Int J Electron Commun,2022

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