Electrical properties of ITO thin films deposited by activated reactive evaporation
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference4 articles.
1. Processes of the activated reactive evaporation type and their tribological applications
2. Preparation of In2O3 and tin-doped In2O3 films by a novel activated reactive evaporation technique
3. X‐ray photoemission spectroscopy studies of Sn‐doped indium‐oxide films
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1. Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In2 O3 nanostructured films;physica status solidi (c);2016-11-03
2. Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation;Brazilian Journal of Physics;2009-12
3. Properties of ITO films deposited by r.f.-PERTE on unheated polymer substrates—dependence on oxygen partial pressure;Thin Solid Films;2003-03
4. Influence of Different Unheated Substrates on the Properties of ITO Thin Films Deposited by rf-PERTE;Key Engineering Materials;2002-10
5. Effect of rf power on the properties of ITO thin films deposited by plasma enhanced reactive thermal evaporation on unheated polymer substrates;Journal of Non-Crystalline Solids;2002-04
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