Low-pressure growth of single-crystal silicon carbide-Reference-Cited by-同舟云学术

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Low-pressure growth of single-crystal silicon carbide

Published:1986-02 Issue:2 Volume:4 Page:77-80
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Harris G.L.,Jackson K.H.,Felton G.J.,Osborne K.R.,Fekade K.,Spencer M.G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

2. Extended Abstracts of the 15th Conference on Solid-State Devices and Materials;Nishino,1983

3. ‘‘Buffer‐layer’’ technique for the growth of single crystal SiC on Si

4. Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Defect Structures in 3C-SiC Single Crystals Using Synchrotron White Beam X-ray Topography;MRS Proceedings;1996

2. Elastic and anelastic properties of chemical vapor deposited epitaxial 3C‐SiC;Journal of Applied Physics;1995-06

3. Stresses in chemical vapor deposited epitaxial 3C‐SiC membranes;Journal of Applied Physics;1995-02

4. On the Homogeneous Chemistry of the Thermal Decomposition of Methyltrichlorosilane: Thermodynamic Analysis and Kinetic Modeling;Journal of The Electrochemical Society;1994-06-01

5. Chemical vapor deposition and plasma-enhanced chemical vapor deposition carbonization of silicon microtips ∗;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-03

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