Photoluminescence changes under high-intensity excitation of A12O3-coated GaAs and their relevance to evaluation of facet coating procedures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Degradation of photoluminescence intensity caused by excitation‐enhanced oxidation of GaAs surfaces
2. The reliability of a practical Ga<inf>1-x</inf>Al<inf>x</inf>As laser device
3. Water vapor, facet erosion, and the degradation of (Al,Ga)As DH lasers operated at CW output powers of up to 3 mW/µ stripewidth
4. F.R. Nash, private communication.
5. High Performance 880 nm (GaAl)As/GaAs Oxide Stripe Lasers with Very Low Degradation Rates at Temperatures up to 120°C
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