The origin of dark spot defects in aged light emitting diodes-Reference-Cited by-同舟云学术

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The origin of dark spot defects in aged light emitting diodes

Published:1984-02 Issue:3 Volume:2 Page:184-188
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Mahajan S.,Chin A.K.,Zipfel C.L.,Brasen D.,Chin B.H.,Tung R.T.,Nakahara S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. 10 000-h continuous CW operation of In1-xGaxAsyP1-yInP DH lasers at room temperature

2. 10000-Hour Continous CW Operation of InGaAsP/InP Heterostructure Lasers with a Buffer Layer at Room Temperature

3. Reliability of high radiance InGaAsP/InP LED́s operating in the 1.2-1.3 µm wavelength

4. Transmission electron microscope observation of dark‐spot defects in InGaAsP/InP double‐heterostructure light‐emitting diodes aged at high temperature

5. TEM Observation of Dark Defects Appearing in InGaAsP/InP Double-Heterostructure Light Emitting Diodes Aged at High Temperature

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23

2. A Review of Materials Issues and Degradation of III-V Compound Semiconductors and Optical Devices;ECS Transactions;2010-10-01

3. On Degradation Studies of III–V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation;Japanese Journal of Applied Physics;2010-09-21

4. Degradation and Reliability;Semiconductor Lasers;1993

5. An Auger electron spectroscopy study of annealed gold contacts to InP;Thin Solid Films;1992-07

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