Effect of growth temperature on the photoluminescent spectra of undoped AlGaAs grown by metalorganic-chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
2. C.W. operation of AlxGa1−xAs/AlyGa1−yAs lasers grown by metalorganic c.v.d. in wavelength range 760~780 nm
3. Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current
4. Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy
5. Luminescence of AlxGa1−xAs grown by MOVPE
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. References;Thin Films by Chemical Vapour Deposition;1990
2. Metalorganic Chemical Vapor Deposition of Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
3. Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors;Journal of Applied Physics;1987-07-15
4. Improved power and temperature performance of heterostructure lasers produced by MOCVD;Semiconductor Science and Technology;1987-03-01
5. OMVPE growth of 660 nm AIGaAs double heterojunction LEDs;Journal of Electronic Materials;1986-01
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