An exploration on the nature of hole traps A and B in LPE n-type GaAs-Reference-Cited by-同舟云学术

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An exploration on the nature of hole traps A and B in LPE n-type GaAs

Published:1988-04 Issue:7 Volume:6 Page:247-250
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Jicheng Zhou,Liansheng Li,Miaoxiu Liu,Bingfang Lu,Jue Zhang

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. presented at the National Conference on Microwave Technology;Zou,1974

2. A study of deep levels in GaAs by capacitance spectroscopy

3. Proceedings of the 13th International Conference on Defects in Semiconductors;Zou,1984

4. Effects of certain growth parameters on hole and electron traps in LPE GaAs

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