Photoluminescence of LPE-grown InAs1−x−ySbxPy for 2.55 μm lasers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. OH-absorption in fluoride glass infra-red fibres
2. Liquid phase epitaxial growth of InAsxSbyPl-x-y layers on InAs
3. InAsPSb/InAs diode laser emitting in the 2.5μm range
4. Organometallic VPE Growth of InAs1-x-ySbxPyon InAs
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Liquid phase epitaxy growth and photoluminescence of InAs1−x−ySbxPy epilayer;Materials Research Express;2019-05-31
2. Light sources for wavelengths > 2 µm grown by MBE on InP using a strain relaxed buffer;IEE Proceedings - Optoelectronics;1998-10-01
3. An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography;Semiconductor Science and Technology;1998-04-01
4. 2.7 [micro sign]m LEDs for water vapour detection grown by MBE on InP;Electronics Letters;1998
5. Phase equilibria in InAsSbP quaternary alloys grown by liquid phase epitaxy;Journal of Electronic Materials;1996-09
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