Pulsed laser annealing of GaAs in a high-pressure argon gas ambience-Reference-Cited by-同舟云学术

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Pulsed laser annealing of GaAs in a high-pressure argon gas ambience

Published:1982-12 Issue:3-4 Volume:1 Page:111-115
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Sato Fumio,Sunada Tadasu,Chikawa Jun-ichi

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Laser and electron-beam solid interactions and materials processing,1981

2. Laser and electron-beam solid interactions and materials processing;Brown,1981

3. Laser and electron-beam solid interactions and materials processing;White,1981

4. Laser and electronbeam solid interactions and materials processing;Williams,1981

5. Gallium arsenide and related compounds;Davies,1982

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. LASER PROCESSING OF METALLIC AND INTERMETALLIC SURFACES;Materials and Manufacturing Processes;1993-05

2. Microfabrication of semiconductors by means of excimer laser doping;Microelectronic Engineering;1993-03

3. Chemical reactions at metallic and metal/semiconductor interfaces stimulated by pulsed laser annealing;Applied Surface Science;1992-01

4. Plasmons, photoluminescence, and band‐gap narrowing in very heavily dopedn‐GaAs;Applied Physics Letters;1990-07-09

5. Direct Formation of Three-Dimensional Structures in GaAs by Excimer Laser Doping;Japanese Journal of Applied Physics;1989-10-20

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