An investigation of the hydrogenated Si-SiO2 interface by X-ray diffraction
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference3 articles.
1. Hydrogen sensitive mos-structures
2. Asymptotic Bragg diffraction. Single-crystal surface-adjoining-layer structure analysis
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MOS structure (Pd-SiO2-Si) based gas sensor with an external catalyst element;Sensors and Actuators B: Chemical;1997-06
2. Electrode structure effect on the selectivity of gas sensors;Sensors and Actuators B: Chemical;1995-07
3. Oxygen effect on the operation of the MOS-structure-based hydrogen sensor;Sensors and Actuators B: Chemical;1994-01
4. Sensitivity of Pd/SiO2/Si sensor to humidity;Sensors and Actuators B: Chemical;1991-08
5. System to detect hydrogen in water;Sensors and Actuators B: Chemical;1991-08
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