High temperature, high rate homoepitaxial synthesis of diamond in a thermal plasma reactor-Reference-Cited by-同舟云学术

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High temperature, high rate homoepitaxial synthesis of diamond in a thermal plasma reactor

Published:1991-12 Issue:5 Volume:12 Page:301-305
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Snail K.A.,Marks C.M.,Lu Z.P.,Heberlein J.,Pfender E.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. High temperature, high rate homoepitaxial growth of diamond in an atmospheric pressure flame

2. Determination of activation energies for diamond growth by an advanced hot filament chemical vapor deposition method

3. Simulations of high‐rate diamond synthesis: Methyl as growth species

4. Mechanism for diamond growth from methyl radicals

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growing Diamond Crystals by Chemical Vapor Deposition;Elements;2005-03-01

2. Diamond Synthesized at Low Pressure;Chemistry and Physics of Carbon;2004-11-30

3. Plasma Torch Diamond Deposition;Diamond Films Handbook;2002-01-23

4. Thermal plasma technology: Where do we stand and where are we going?;Plasma Chemistry and Plasma Processing;1999

5. Plasma-Jet Deposition of Diamond;Low-Pressure Synthetic Diamond;1998

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