Origin of photoluminescence peaks in Ge–SiO2 thin films
Author:
Affiliation:
1. Department of Physics, Suzhou University, Suzhou, 215006, People*s Republic of China,
2. Ion Beam Laboratory,, Shanghai Institute of Metallurgy,Academia Sinica, Shanghai, 200050, People*s Republic of China,
Publisher
Informa UK Limited
Subject
General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1016/S1468-6996%2802%2900024-4
Reference8 articles.
1. Blue luminescence in films containing Ge and GeO2 nanocrystals: The role of defects
2. Room-temperature blue luminescence of thermally oxidized Si1−x−yGexCy thin films on Si (100) substrates
3. Optically active oxygen-deficiency-related centers in amorphous silicon dioxide
4. Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition
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