Non-equilibrium statistical theory for electromigration damage-Reference-Cited by-同舟云学术

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Non-equilibrium statistical theory for electromigration damage

Published:2008-10 Issue:24 Volume:387 Page:6115-6125
ISSN:0378-4371
Container-title:Physica A: Statistical Mechanics and its Applications
language:en
Short-container-title:Physica A: Statistical Mechanics and its Applications

Author:

Montemayor-Aldrete J.A.,Vázquez-Villanueva C.,Ugalde-Vélez P.,del Castillo-Mussot M.,Vázquez-Fonseca G.J.,Mendoza-Allende A.,Coyotécatl H.A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Statistics and Probability

Reference32 articles.

1. Electromigration in thin aluminum films on titanium nitride

2. A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2

3. Electromigration in stressed thin films

4. Stress and electromigration in Al-lines of integrated circuits

5. Electromigration in integrated circuits

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A statistical mechanics model to predict electromigration induced damage and void growth in solder interconnects;Physica A: Statistical Mechanics and its Applications;2017-02

2. Irreversible entropy model for damage diagnosis in resistors;Journal of Applied Physics;2015-10-28

3. Modeling of electromigration phenomena;Electromigration in Thin Films and Electronic Devices;2011

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