Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors-Reference-Cited by-同舟云学术

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Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors

Published:2016-08 Issue: Volume:91 Page:1-8
ISSN:1350-4487
Container-title:Radiation Measurements
language:en
Short-container-title:Radiation Measurements

Author:

Gokhale Sasmit S.,Han HyukSu,Pelaez Oswaldo,Baciak James E.,Nino Juan C.,Jordan Kelly A.

Funder

Department of Energy National Nuclear Security Administration

Publisher

Elsevier BV

Subject

Instrumentation,Radiation

Reference26 articles.

1. Bismuth tri-iodide polycrystalline films for x-ray direct and digital imagers;Aguiar;Nucl. Instr. Methods. A,2009

2. Characterization of single-crystal mercuric iodide;Alexiev;Nucl. Instr. Methods. A,2004

3. Charge transport properties in CdZnTe detectors grown by the bridgman technique;Auricchio;J. Appl. Phys.,2011

4. Charge transport in arrays of semiconductor gamma-ray detectors;Barett;Phys. Rev. Lett.,1995

5. Effects of surface processing on the performance of Cd1–xZnxTe radiation detectors;Cui;IEEE Trans. Nucl. Sci.,2004

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