The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study
Author:
Funder
Grantová Agentura České Republiky
Publisher
Elsevier BV
Subject
Instrumentation,Radiation
Reference47 articles.
1. Electrical properties of Si-doped GaN prepared using pulsed sputtering;Arakawa;Appl. Phys. Lett.,2017
2. Defect formation near GaN surfaces and interfaces;Brillson;Physica B,1999
3. Undoped and Eu, Na co-doped LiCaAlF6 scintillation crystals: paramagnetic centers, charge trapping and energy transfer properties;Buryi;J. Alloys Compd.,2021
4. Influence of Mo doping on the luminescence properties and defect states in ZnO nanorods. Comparison with ZnO:Mo thin films;Buryi;Appl. Surf. Sci.,2021
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