Self-assembled (In,Ga)As/GaAs quantum-dot nanostructures: strain distribution and electronic structure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference40 articles.
1. Three-dimensional compositional analysis of quantum dots
2. Critical layer thickness for self-assembled InAs islands on GaAs
3. Valence band engineering in strained-layer structures
4. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
5. Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy
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