Analysis of the resistance of two-dimensional holes in SiGe over a wide temperature range-Reference-Cited by-同舟云学术

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Analysis of the resistance of two-dimensional holes in SiGe over a wide temperature range

Published:2002-03 Issue:2-4 Volume:13 Page:723-727
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Senz V.,Ihn T.,Heinzel T.,Ensslin K.,Dehlinger G.,Grützmacher D.,Gennser U.,Hwang E.H.,Das Sarma S.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Metallic behavior and related phenomena in two dimensions

2. Metal–insulator transition in 2D: resistance in the critical region

3. Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening

4. Temperature dependence of the conductivity for the two-dimensional electron gas: Analytical results for low temperatures

5. Charged Impurity-Scattering-Limited Low-Temperature Resistivity of Low-Density Silicon Inversion Layers

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1. Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon;Physical Review B;2014-06-18

2. Electronic transport in two-dimensional graphene;Reviews of Modern Physics;2011-05-16

3. Dipole trap model for the metal-insulator transition in gated silicon-inversion layers;Physical Review B;2010-11-09

4. Temperature Dependence of Polarizability and Dispersion in Three, Two and One Dimensional Electron Gases;Plasma Science and Technology;2009-10

5. Screening-induced temperature-dependent transport in two-dimensional graphene;Physical Review B;2009-04-06

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