Measurement of electron capture probability in quantum well-Reference-Cited by-同舟云学术

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Measurement of electron capture probability in quantum well

Published:1998-07 Issue:1-4 Volume:2 Page:228-231
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Maimon S,Finkman E,Schacham S.E,Ritter D,Bahir G

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Bias dependence of responsivity and transport in asymmetric quantum well infrared detectors

2. Photoconductive gain and generation‐recombination noise in multiple‐quantum‐well infrared detectors

3. Capture time versus barrier thickness in quantum‐well structures measured by infrared photoconductive gain

4. Dynamics of carrier transport and carrier capture inIn1−xGaxAs/InP heterostructures

5. Carrier capture into a semiconductor quantum well

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Computational Study on the Electronic Properties of Armchair Graphene Nanoribbons Confined by Boron Nitride;Japanese Journal of Applied Physics;2012-03-01

2. Semiconductor quantum materials and their applications in electronics and optoelectronics;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

3. Quantum dot infrared photodetectors in new material systems;Physica E: Low-dimensional Systems and Nanostructures;2000-04

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