Measurement of subsurface damage in silicon wafers-Reference-Cited by-同舟云学术

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Measurement of subsurface damage in silicon wafers

Published:1994-04 Issue:2 Volume:16 Page:139-144
ISSN:0141-6359
Container-title:Precision Engineering
language:en
Short-container-title:Precision Engineering

Author:

Bismayer U.,Brinksmeier E.,Güttler B.,Seibt H.,Menz C.

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. Mechanische Kristallbearbeitung;Hadamovsky,1985

2. Structure of the surface layers of molybdenum single crystals after machining;Gert;Physics Chem Mech Surface,1984

3. Abrasive machining of silicon;Tönschoff;Ann CIRP,1990

4. Werkzeugbeanspruchung beim Innendurchmesser-Trenn-schleifen;v. Schmieden,1990

5. Research and Development;Lundt,1992

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1. Detection of Subsurface Damage Morphology of Lapped Optical Components by Analysis of the Fluorescence Lifetimes of Quantum Dots;Electronics;2023-09-13

2. Detecting Subsurface Damage within Glasses with Polarization-Sensitive Optical Coherence Tomography;2023

3. Subsurface damage detection of optical elements by analyzing the photobleaching properties of quantum dots;Precision Engineering;2022-09

4. Nanometric cutting: Mechanisms, practices and future perspectives;International Journal of Machine Tools and Manufacture;2022-07

5. The Influence of Crystal Orientation on Subsurface Damage of Mono-Crystalline Silicon by Bound-Abrasive Grinding;Micromachines;2021-03-28

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