Author:
Sbrockey Nick M,Ganesan Shanthi
Subject
Electrical and Electronic Engineering
Reference5 articles.
1. (a) D C Look, “Recent advances in ZnO materials and devices,” Materials Science & Engineering B, Vol: 80(1-3), p. 383 (2001).
2. (b) B K Meyer et al, “Bound exciton and donor-acceptor pair recombinations in ZnO,” Physica Status Solidi (b), Vol. 241(2), p. 227 (2004).
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4. J E Nause, J O Maciejewski, V Munne and S Ganesan, “Method of forming a p-type group II-VI semiconductor crystal layer on a substrate.” US Pat Application 204/0058463, March 25, 2004.
5. For a review of the present status of p-type doping developments for ZnO, see D C Look and B Claflin, “P-type doping and devices based on ZnO,” Physica Status Solidi (b), Vol. 241(3), p. 624 (‘04).
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