Light-intensity dependence of excess carrier lifetimes-Reference-Cited by-同舟云学术

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Light-intensity dependence of excess carrier lifetimes

Published:1996-05 Issue: Volume:198-200 Page:271-275
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Adriaenssens G.J.,Baranovskii S.D.,Fuhs W.,Jansen J.,Öktü Ö.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Transport and recombination properties of amorphous arsenic telluride

2. Drift Mobility and Photoconductivity in Amorphous Silicon

3. Drift mobility in n– and p–conducting a-Si: H

4. Some observations on the photoconductivity of amorphous semiconductors

5. Electron drift mobility in hydrogenated amorphous Si1−xCxwith a low carbon content

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and Photoelectrical Properties of Chalcogenide Glasses;Semiconductors and Semimetals;2004

2. Transient decay from the steady state in the photoconductivity of amorphous semiconductors;Physical Review B;1998-12-15

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