High quantum efficiency a-Si:H picosecond transit-time limited Schottky barrier photodetectors-Reference-Cited by-同舟云学术

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High quantum efficiency a-Si:H picosecond transit-time limited Schottky barrier photodetectors

Published:1984-07 Issue:1-2 Volume:66 Page:381-386
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Johnson A.M.,Glass A.M.,Olson D.H.,Simpson W.M.,Harbison J.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. An amorphous silicon photodetector for picosecond pulses

2. Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors

3. Picosecond transient photocurrents in amorphous silicon

4. Continuous-wave mode-locked Nd:YAG-pumped subpicosecond dye lasers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation and investigation of nano-thick FTO/Ag/FTO multilayer transparent electrodes with high figure of merit;Scientific Reports;2016-02-02

2. Amorphous silicon bibliography 1984 update introduction;Solar Cells;1985-08

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