Evidence of quantum size effects in a-Si:H/a-SiCx:H superlattices. Observation of negative resistance in double barrier structures-Reference-Cited by-同舟云学术

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Evidence of quantum size effects in a-Si:H/a-SiCx:H superlattices. Observation of negative resistance in double barrier structures

Published:1987-12 Issue: Volume:97-98 Page:871-874
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Pereyra I.,Carreno M.N.P.,Onmori R.K.,Sassaki C.A.,Andrade A.M.,Alvarez F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Bandgap and resistivity of amorphous semiconductor superlattices

2. Properties of amorphous semiconductinga−Si:Ha−SiNx:Hmultilayer films and ofa−SiNx:Halloys

3. Tunneling in a finite superlattice

4. Photoemission studies of amorphous semiconductor heterojunctions

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2. Thin film semiconductor nanomaterials and nanostructures prepared by physical vapour deposition: An atomic force microscopy study;Journal of Physics and Chemistry of Solids;2007-05

3. Resonant Tunneling Via Man-Made Quantum Well States;Superlattice to Nanoelectronics;2005

4. Hole Resonant Tunneling through SiC/Si-dot/SiC Heterostructures;Materials Science Forum;2002-04

5. Temperature dependence of photocurrent components on enhanced performance GaAs/AlGaAs multiple quantum well solar cells;Solar Energy Materials and Solar Cells;2001-12

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