Boron doping and hydrogenation by ion implantation of a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. The effects of ion implantation on the electrical properties of amorphous silicon
2. Ion Implantation as a Tool to Control Properties of Amorphous Hydrogenated Silicon
3. Transport phenomena in amorphous silicon doped by ion implantation of 3d metals
4. Ion implantation and hydrogen passivation in amorphous silicon films
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Defect formation and crystallization in a-Si:H induced by Si+ implantation;Journal of Non-Crystalline Solids;2002-04
2. Defects in a-Si:H films induced by Si ion implantation;Semiconductors;1999-04
3. Boron and phosphorus doping of a-SiC:H thin films by means of ion implantation;Thin Solid Films;1995-09
4. Photoluminescence and photothermal deflection spectroscopy in potassium doped a-Si:H;Journal of Non-Crystalline Solids;1993-12
5. Preparation of a-Si and a-Si-Alloy Films Using an Ion-Gun Chemical Vapor Deposition Method;Japanese Journal of Applied Physics;1991-07-15
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