The density of gap states in single- and multi-layer of a-Si:H measured by optical absorption and infrared stimulated current-Reference-Cited by-同舟云学术

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The density of gap states in single- and multi-layer of a-Si:H measured by optical absorption and infrared stimulated current

Published:1987-12 Issue: Volume:97-98 Page:751-754
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Han Daxing,Li Wei,Quian Shenfa,Qiu Changhua

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Density-of-states distribution in the mobility gap of a-Si:H

2. Influence of deposition rate on ESR signals in a-Si

3. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic photoinduced optical phenomena in amorphous As2Se3/As2S3multilayer structures;Semiconductor Science and Technology;1992-07-01

2. Gap density of states in amorphous silicon‐germanium alloy: Influence on photothermal deflection spectroscopy and steady‐state conductivity measurements;Journal of Applied Physics;1990-01-15

3. Interface defects in a-Si: H/a-Si3N4: H superlattices as elucidated from photothermal deflection spectroscopy measurements;Philosophical Magazine B;1989-07

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