A new deposition parameter to control the carrier drift mobility in a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Electron drift mobility in amorphous Si: H
2. Electronic transport and state distribution in amorphous Si films
3. Band tail states in a-Si:H — influence of preparation conditions and techniques for characterisation
4. Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
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2. Plasma Composition by Mass Spectrometry in a Ar-SiH4-H2 LEPECVD Process During nc-Si Deposition;Plasma Chemistry and Plasma Processing;2011-01-05
3. Drift-mobility measurements and mobility edges in disordered silicons;Journal of Physics: Condensed Matter;2004-10-23
4. Low-mobility solar cells: a device physics primer with application to amorphous silicon;Solar Energy Materials and Solar Cells;2003-07
5. Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon;MRS Proceedings;2003
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