Temperature dependence of absorption edge from room temperature to above melting point in amorphous As2Se3
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Electronic conduction in As 2 Se 3 , As 2 Se 2 Te and similar materials
2. Absorption edge and internal electric fields in amorphous semiconductors
3. Electronic Processes in Non-Crystalline Material;Mott,1971
4. Interpretation of Urbach's Rule
5. Electronic properties of some simple chalcogenide glasses
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature-driven narrowing of the insulating gap as a precursor of the insulator-to-metal transition: Implications for the electronic structure of solids;The Journal of Chemical Physics;2019-06-28
2. Comparison of the luminescence centers in a-As2Se3 and c-As2Se3 by time-resolved photoluminescence and photo-induced absorption measurements;Journal of Non-Crystalline Solids;1983-12
3. Experimentally Deduced Adiabatic Potential of Ge Doped As2se3 Glasses;Journal of the Physical Society of Japan;1982-06
4. Evidence for the neutrality of luminescence centres in chalcogenide glasses;Philosophical Magazine B;1978-06
5. The Modulated Photocurrent of Amorphous As2Se3;Japanese Journal of Applied Physics;1977-11
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