Space charge spectroscopy of the gap states in hydrogenated amorphous silicon counterdoped with boron-Reference-Cited by-同舟云学术

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Space charge spectroscopy of the gap states in hydrogenated amorphous silicon counterdoped with boron

Published:1983-12 Issue: Volume:59-60 Page:261-264
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Cullen Patricia,Harbison James P.,Lang David V.,Adler David

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Defect states in doped and compensateda-Si: H

2. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy

3. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states

4. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of Reverse Bias Differential Charge Experiments in Amorphous Silicon;MRS Proceedings;1994

2. The Simulation of a-Si:H Junction Capacitance Measurements;MRS Proceedings;1993-01-01

3. Semiconductors for solar cell applications;Progress in Materials Science;1991-01

4. Optical modulation spectroscopy of dangling bonds in a-Si: H;Philosophical Magazine B;1990-03

5. Evidence ofg=2.013 defect centers ina-Si:H;Physical Review B;1988-04-01

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