The effect of hydrogen content on the properties of reactively sputtered amorphous SiH
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference3 articles.
1. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering
2. Jeffrey, F. R., Shanks, H. R. and Danielson, G. C., J. Appl. Phys. To be published.
3. Quantitative analysis of hydrogen in glow discharge amorphous silicon
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1. On the influence of short and medium range order on the material band gap in hydrogenated amorphous silicon;Journal of Applied Physics;2004-10
2. Study of RF Sputtered aSi: H and aGe: H by Photothermal Deflection Spectroscopy;physica status solidi (b);1995-12-01
3. The role of substrate temperature and in-chamber annealing in H-Si bonding configurations in sputtered a-Si:H;Thin Solid Films;1993-04
4. Effect of γ-Radiation on the Conduction Phenomena of Amorphous As4Se4Te2 at Low Temperatures;Isotopenpraxis Isotopes in Environmental and Health Studies;1990-01
5. Structural, optical and electrical properties of RF-sputtered a-SiGe:H:O alloys;Journal of Non-Crystalline Solids;1987-12
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