Computer simulation of effects of hydrogen on the dangling bonds in hydrogenated amorphous silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Electron-nuclear double resonance of dangling-bond centres associated with hydrogen incorporation in aSi:H
2. Microscopic Mechanism for Annealing of Photocreated Dangling Bonds in a-Si:H
3. Theoretical investigation of the dangling bond defects in hydrogenated amorphous silicon (a-Si:H) by the self-consistent-field X-alpha scattered-wave cluster molecular-orbital method
4. The Effects of H and F on the ESR Signals in a-Si
5. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter
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1. Electron trapping by excited microvoids (ETEM)—an explanation of the Staebler–Wronski effect;Physica B: Condensed Matter;2004-12
2. Microstructure of local defects in amorphous Si:H: A quantum chemical study;Physical Review B;2001-10-15
3. Distorted silicon hydrides? a comparative study with various density functionals;Journal of Computational Chemistry;2000
4. Electron Spin Resonance Study of Light-Induced Annealing of Dangling Bonds in Glow Discharge Hydrogenated Amorphous Silicon: Deconvolution of Electron Spin Resonance Spectra;Japanese Journal of Applied Physics;1998-12-15
5. Deconvolution of ESR Spectra and Their Light-Induced Effect in a-Si:H;Journal of the Physical Society of Japan;1997-06-15
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