Key parameters for further reduction of gap states in a-Ge:H and its improved stability under keV-electron irradiation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Influence of plasma deposition on structural and electronic properties of a-Ge:H
2. Structural, optical, and electrical characterization of improved amorphous hydrogenated germanium
3. High photoconductivity in magnetron sputtered amorphous hydrogenated germanium films
4. Tetrahedrally - Bonded Amorphous Semiconductors;Persans,1985
5. Correlation between the structural and the electronic transport properties of sputtered hydrogenated amorphous germanium films
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Some aspects on an improved stability of a-Si:H and a-Ge:H films with respect to their microstructure;Journal of Non-Crystalline Solids;1996-05
2. Equilibrium defect density in hydrogenated amorphous germanium;Applied Physics Letters;1994-09-26
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