Effect of process parameters on the properties of electron cyclotron resonance plasma deposited silicon-oxynitride-Reference-Cited by-同舟云学术

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Effect of process parameters on the properties of electron cyclotron resonance plasma deposited silicon-oxynitride

Published:1995-07 Issue: Volume:187 Page:403-408
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Bulkin Pavel V.,Swart Pieter L.,Lacquet Beatrys M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Dislocation Mechanisms of Relaxation in Strained Epitaxial Films

2. Effect of si—h and n—h bonds on electrical properties of plasma deposited silicon nitride and oxynitride films

3. Electron cyclotron resonance plasma deposition of SiNx for optical applications

4. Optical properties of SiNx deposited by electron cyclotron resonance plasma-enhanced deposition

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2. SiO2Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells;International Journal of Photoenergy;2014

3. Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings;International Journal of Photoenergy;2013

4. Influence of PECVD SiOx and SiNx:H films on optical and passivation properties of antireflective porous silicon coatings for silicon solar cells;physica status solidi (c);2010-12-02

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