The role of hydrogen in the action of fluorine in structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Radiation Response of MOS Capacitors Containing Fluorinated Oxides
2. Improved hot-carrier resistance with fluorinated gate oxides
3. Simultaneous elimination of electrically active defects in Si/SiO2 structures by implanted fluorine
4. Necessity of hydrogen for activation of implanted fluorine in Si/SiO2structures
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2. Charge Properties of Paramagnetic Defects in Semiconductor/Oxide Structures;Bias Temperature Instability for Devices and Circuits;2013-09-10
3. Insights on the physical mechanism behind negative bias temperature instabilities;Applied Physics Letters;2007-01-22
4. Defect generation under electrical stress;High k Gate Dielectrics;2003-12
5. Defect Generation in Ultrathin SiON/ZrO[sub 2] Gate Dielectric Stacks;Journal of The Electrochemical Society;2002
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