Wavelength controlled InAs/InP quantum dots for telecom laser applications-Reference-Cited by-同舟云学术

Wavelength controlled InAs/InP quantum dots for telecom laser applications

Published:2006-12 Issue:12 Volume:37 Page:1461-1467
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Anantathanasarn S.,Nötzel R.,van Veldhoven P.J.,van Otten F.W.M.,Barbarin Y.,Servanton G.,de Vries T.,Smalbrugge E.,Geluk E.J.,Eijkemans T.J.,Bente E.A.J.M.,Oei Y.S.,Smit M.K.,Wolter J.H.

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Gain and the threshold of three-dimensional quantum-box lasers

3. Quantum computation with quantum dots

4. Effects of As/P exchange reaction on the formation of InAs/InP quantum dots

5. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

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