Author:
Zhang Fengming,Tang Rui,Kim Yong-Bin
Reference25 articles.
1. FinFET scaling to 10nm gate length;Yu;Int. Electron. Devices Meet.,2002
2. R. Martel, V. Derycke, J. Appenzeller et al., Carbon nanotube field-effect transistors and logic circuits, ACM SIGDA DAC, 2002.
3. J. Redwing, T. Mayer, S. Mohney et al., Semiconductor nanowires: building blocks for nanoscale electronics, NSF Nanoscale Science and Engineering Grantees Conference, December 2002.
4. Novel resonant tunneling transistor with high transconductance at room temperature;Peatman;IEEE Electron. Device Lett.,1994
5. P. Hadley, Single-electron tunneling dvices, AIP Conference Proceedings, 427, Woodbury, New York, 1998, pp. 256–270.
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