A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism-Reference-Cited by-同舟云学术

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A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism

Published:2019-04 Issue: Volume:86 Page:1-6
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Li Linan,Ba Wenqiang,Wang Wei,Li Ling,Xu Guangwei,Wang Lingfei,Ji Zhuoyu,Lu Congyan,Banerjee Writam

Publisher

Elsevier BV

Subject

General Engineering

Reference33 articles.

1. Oxide semiconductor thin-film transistors: a review of recent advances;Fortunato;Adv. Mater.,2012

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices;Park;Thin Solid Films,2012

3. Thin-film transistor vth shift model based on kinetics of electron transfer in gate dielectric;Wang;IEEE Trans. Electron Devices,2014

4. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water;Park;Appl. Phys. Lett.,2008

5. Flexible self-aligned double-gate IGZO TFT;Münzenrieder;IEEE Electron. Device Lett.,2014

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1. Carrier Velocity in Amorphous Metal–Oxide–Semiconductor Transistors;IEEE Transactions on Electron Devices;2021-01

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