Single-event burnout hardening evaluation with current and electric field redistribution of high voltage LDMOS transistors based on TCAD Simulations

Author:

Lei YiboORCID,Fang Jian,liang Yingdong,Zhang Yisen,Yan Ling,Tang Lingli,Yang Xihe,Zhang Bo

Publisher

Elsevier BV

Subject

General Engineering

Reference32 articles.

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4. A review on VDMOS as a power MOSFET;Gupta;IOSR J. Electron. Commun. Eng.,2016

5. A new ESD self-protection structure for 700V high side gate drive IC;Kim;29th International Symposium on Power Semiconductor Devices and IC's (ISPSD),2017

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