Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors-Reference-Cited by-同舟云学术

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Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors

Published:2006-08 Issue:8 Volume:37 Page:678-680
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Deng Shao-You,Wu Chang-Han,Lee Joseph Ya-min

Publisher

Elsevier BV

Subject

General Engineering

Reference7 articles.

1. Reliability physics of compound semiconductor transistors for microwave applications;Borgarino;Microelectr. Reliab.,2001

2. Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability;Low;IEEE Proc. IEDM,1998

3. Hydrogen-related burn-in GaAs/AlGaAs HBTs and implications for reliability;Handerson;IEDM Tech. Digest,1996

4. A mechanism for hydrogen-related transient effects in carbon-doped AlGaAs/GaAs heterostructure bipolar transistors;Chi;IEEE Electron. Dev. Lett.,1998

5. Transient characteristics of InGaP/GaAs/AlGaAs double heterojunction bipolar transistors;Lutz;Digest, GaAs MANTECH,2000

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A junction characterization for microelectronic devices quality and reliability;Microelectronics Reliability;2008-03

2. Role of Annealing in Constant Period of Voltage Stress on the Burn-in Effect Suppression of InGaP/GaAs Heterojunction Bipolar Transistors;Japanese Journal of Applied Physics;2007-03-08

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