Input-resistance reduced g-boosted common-gate transimpedance amplifier for 100 Gb/s optical communication-Reference-Cited by-同舟云学术

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Input-resistance reduced g-boosted common-gate transimpedance amplifier for 100 Gb/s optical communication

Published:2021-08 Issue: Volume:114 Page:105155
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Chong Joseph^ORCID,Pour Fariborz Lohrabi^ORCID,Ha Dong Sam

Funder

Institute for Information and Communications Technology Promotion

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

General Engineering

Reference21 articles.

1. Beyond 100 gigabit Ethernet, technical challenges;Nowell,2013

2. Bandwidth enhancement with low group-delay variation for a 40-Gb/s transimpedance amplifier;Kim;IEEE Transactions on Circuits and Systems I Regular Papers,2010

3. A 40 Gb/s transimpedance amplifier in 65 nm CMOS;Bashiri,2010

4. A 40-ghz bandwidth transimpedance amplifier with adjustable gain-peaking in 65-nm cmos;Ding,2014

5. A 40 gbps optical receiver analog front-end in 65 nm CMOS;Chou,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Differential high gain transimpedance amplifier with –3dB-bandwidth extension;Microelectronics Journal;2023-09

2. A CMOS transimpedance amplifier with broad-band and high gain based on negative Miller capacitance;Integration;2023-07

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